Volume 2, Issue 2
Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes

Sheng Wang, Yun Kang & Yu Han

J. At. Mol. Sci., 2 (2011), pp. 162-169.

Published online: 2011-02

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  • Abstract

The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.

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COPYRIGHT: © Global Science Press

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wangsheng10@126.com (Sheng Wang)

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@Article{JAMS-2-162, author = {Wang , ShengKang , Yun and Han , Yu}, title = {Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes}, journal = {Journal of Atomic and Molecular Sciences}, year = {2011}, volume = {2}, number = {2}, pages = {162--169}, abstract = {

The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.

}, issn = {2079-7346}, doi = {https://doi.org/10.4208/jams.082510.092010a}, url = {http://global-sci.org/intro/article_detail/jams/8121.html} }
TY - JOUR T1 - Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes AU - Wang , Sheng AU - Kang , Yun AU - Han , Yu JO - Journal of Atomic and Molecular Sciences VL - 2 SP - 162 EP - 169 PY - 2011 DA - 2011/02 SN - 2 DO - http://doi.org/10.4208/jams.082510.092010a UR - https://global-sci.org/intro/article_detail/jams/8121.html KW - Stark effect, quantum boxes, electric field, variational method, quantum sizes. AB -

The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.

Wang , ShengKang , Yun and Han , Yu. (2011). Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes. Journal of Atomic and Molecular Sciences. 2 (2). 162-169. doi:10.4208/jams.082510.092010a
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