TY - JOUR
T1 - Transverse Stark Effect of Electrons in GaAs Semiconducting Quantum Boxes
AU - Wang , Sheng
AU - Kang , Yun
AU - Han , Yu
JO - Journal of Atomic and Molecular Sciences
VL - 2
SP - 162
EP - 169
PY - 2011
DA - 2011/02
SN - 2
DO - http://doi.org/10.4208/jams.082510.092010a
UR - https://global-sci.org/intro/article_detail/jams/8121.html
KW - Stark effect, quantum boxes, electric field, variational method, quantum sizes.
AB - <p style="text-align: justify;">The transverse Stark shift of the electronic energy levels in GaAs semiconducting quantum box is investigated by the use of variational solutions to the effective-mass approximation. It is found an interesting phenomenon that the largest Stark shift is obtained for the electric field directed along the diagonal in cross section of a quantum box, while for a rectangular one, the shift reaches peak value for the low field directed along a side of cross section and for the high field along the diagonal. Likewise, the conclusion is shown that the transverse Stark shift in a quantum box depends highly on the ratio of cross sectional sides while is irrelevant to its height. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination and wide irradiance spectrum.</p>