Volume 7, Issue 4
Pinning Effect on Current-Induced Domain Wall Motion in Nanostrip

East Asian J. Appl. Math., 7 (2017), pp. 837-851.

Published online: 2018-02

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• Abstract

Pinning effect on current-induced magnetic transverse domain wall dynamics in nanostrip is studied for its potential application to new magnetic memory devices. In this study, we carry out a series of calculations by solving generalized Landau-Lifshitz equation involving a current spin transfer torque in one and two dimensional models. The critical current for the transverse wall depinning in nanostrip depends on the size of artificial rectangular defects on the edges of nanostrip. We show that there is intrinsic pinning potential for a defect such that the transverse wall oscillates damply around the pinning site with an intrinsic frequency if the applied current is below critical value. The amplification of the transverse wall oscillation for both displacement and maximum value of $m_3$ is significant by applying AC current and current pulses with appropriate frequency. We show that for given pinning potential, the oscillation amplitude as a function of the frequency of the AC current behaves like a Gaussian distribution in our numerical study, which is helpful to reduce strength of current to drive the transverse wall motion.

• Keywords

Spin current, domain wall motion, Landau-Lifshitz equation.

35R05, 58J35, 35Q60

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@Article{EAJAM-7-837, author = {}, title = {Pinning Effect on Current-Induced Domain Wall Motion in Nanostrip }, journal = {East Asian Journal on Applied Mathematics}, year = {2018}, volume = {7}, number = {4}, pages = {837--851}, abstract = {

Pinning effect on current-induced magnetic transverse domain wall dynamics in nanostrip is studied for its potential application to new magnetic memory devices. In this study, we carry out a series of calculations by solving generalized Landau-Lifshitz equation involving a current spin transfer torque in one and two dimensional models. The critical current for the transverse wall depinning in nanostrip depends on the size of artificial rectangular defects on the edges of nanostrip. We show that there is intrinsic pinning potential for a defect such that the transverse wall oscillates damply around the pinning site with an intrinsic frequency if the applied current is below critical value. The amplification of the transverse wall oscillation for both displacement and maximum value of $m_3$ is significant by applying AC current and current pulses with appropriate frequency. We show that for given pinning potential, the oscillation amplitude as a function of the frequency of the AC current behaves like a Gaussian distribution in our numerical study, which is helpful to reduce strength of current to drive the transverse wall motion.

}, issn = {2079-7370}, doi = {https://doi.org/10.4208/eajam.181016.300517d}, url = {http://global-sci.org/intro/article_detail/eajam/10724.html} }
TY - JOUR T1 - Pinning Effect on Current-Induced Domain Wall Motion in Nanostrip JO - East Asian Journal on Applied Mathematics VL - 4 SP - 837 EP - 851 PY - 2018 DA - 2018/02 SN - 7 DO - http://doi.org/10.4208/eajam.181016.300517d UR - https://global-sci.org/intro/article_detail/eajam/10724.html KW - Spin current, domain wall motion, Landau-Lifshitz equation. AB -

Pinning effect on current-induced magnetic transverse domain wall dynamics in nanostrip is studied for its potential application to new magnetic memory devices. In this study, we carry out a series of calculations by solving generalized Landau-Lifshitz equation involving a current spin transfer torque in one and two dimensional models. The critical current for the transverse wall depinning in nanostrip depends on the size of artificial rectangular defects on the edges of nanostrip. We show that there is intrinsic pinning potential for a defect such that the transverse wall oscillates damply around the pinning site with an intrinsic frequency if the applied current is below critical value. The amplification of the transverse wall oscillation for both displacement and maximum value of $m_3$ is significant by applying AC current and current pulses with appropriate frequency. We show that for given pinning potential, the oscillation amplitude as a function of the frequency of the AC current behaves like a Gaussian distribution in our numerical study, which is helpful to reduce strength of current to drive the transverse wall motion.

Lei Yang. (2019). Pinning Effect on Current-Induced Domain Wall Motion in Nanostrip . East Asian Journal on Applied Mathematics. 7 (4). 837-851. doi:10.4208/eajam.181016.300517d
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