@Article{EAJAM-7-837,
author = {},
title = {Pinning Effect on Current-Induced Domain Wall Motion in Nanostrip },
journal = {East Asian Journal on Applied Mathematics},
year = {2018},
volume = {7},
number = {4},
pages = {837--851},
abstract = {<p style="text-align: justify;">Pinning effect on current-induced magnetic transverse domain wall dynamics
in nanostrip is studied for its potential application to new magnetic memory devices. In
this study, we carry out a series of calculations by solving generalized Landau-Lifshitz
equation involving a current spin transfer torque in one and two dimensional models.
The critical current for the transverse wall depinning in nanostrip depends on the size
of artificial rectangular defects on the edges of nanostrip. We show that there is intrinsic
pinning potential for a defect such that the transverse wall oscillates damply around
the pinning site with an intrinsic frequency if the applied current is below critical value.
The amplification of the transverse wall oscillation for both displacement and maximum
value of $m_3$ is significant by applying AC current and current pulses with appropriate
frequency. We show that for given pinning potential, the oscillation amplitude as a
function of the frequency of the AC current behaves like a Gaussian distribution in our
numerical study, which is helpful to reduce strength of current to drive the transverse
wall motion.</p>},
issn = {2079-7370},
doi = {https://doi.org/10.4208/eajam.181016.300517d},
url = {http://global-sci.org/intro/article_detail/eajam/10724.html}
}