Volume 1, Issue 2
Finite Element Analysis of Semiconductor Device Equations with Heat Effect

Jiansong Zhang, Jiang Zhu, Danping Yang & Xijun

DOI:

Int. J. Numer. Anal. Mod. B, 1 (2010), pp. 197-216

Published online: 2010-01

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  • Abstract

In this paper, the system of the semiconductor device equations with heat effect is considered. An approximation to the system that makes use of a mixed finite element method for the electrostatic potential equation combined with a finite element method for the densities equations and the temperature equation is proposed. Existence and uniqueness of the approximate solution are proved. A convergence analysis is also given.

  • Keywords

Semiconductor device with heat effect finite element scheme existence and uniqueness convergence analysis

  • AMS Subject Headings

65M12 65M15 65M60.

  • Copyright

COPYRIGHT: © Global Science Press

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@Article{IJNAMB-1-197, author = {Jiansong Zhang, Jiang Zhu, Danping Yang and Xijun }, title = {Finite Element Analysis of Semiconductor Device Equations with Heat Effect}, journal = {International Journal of Numerical Analysis Modeling Series B}, year = {2010}, volume = {1}, number = {2}, pages = {197--216}, abstract = {In this paper, the system of the semiconductor device equations with heat effect is considered. An approximation to the system that makes use of a mixed finite element method for the electrostatic potential equation combined with a finite element method for the densities equations and the temperature equation is proposed. Existence and uniqueness of the approximate solution are proved. A convergence analysis is also given.}, issn = {}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/ijnamb/332.html} }
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