Finite Element Analysis of Semiconductor Device Equations with Heat Effect
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@Article{IJNAMB-1-197,
author = {Jiansong Zhang, Jiang Zhu, Danping Yang and Xijun },
title = {Finite Element Analysis of Semiconductor Device Equations with Heat Effect},
journal = {International Journal of Numerical Analysis Modeling Series B},
year = {2010},
volume = {1},
number = {2},
pages = {197--216},
abstract = {In this paper, the system of the semiconductor device equations with heat effect is considered. An approximation to the system that makes use of a mixed finite element method
for the electrostatic potential equation combined with a finite element method for the densities
equations and the temperature equation is proposed. Existence and uniqueness of the approximate
solution are proved. A convergence analysis is also given.},
issn = {},
doi = {https://doi.org/},
url = {http://global-sci.org/intro/article_detail/ijnamb/332.html}
}
TY - JOUR
T1 - Finite Element Analysis of Semiconductor Device Equations with Heat Effect
AU - Jiansong Zhang, Jiang Zhu, Danping Yang & Xijun
JO - International Journal of Numerical Analysis Modeling Series B
VL - 2
SP - 197
EP - 216
PY - 2010
DA - 2010/01
SN - 1
DO - http://doi.org/
UR - https://global-sci.org/intro/article_detail/ijnamb/332.html
KW - Semiconductor device with heat effect
KW - finite element scheme
KW - existence and uniqueness
KW - convergence analysis
AB - In this paper, the system of the semiconductor device equations with heat effect is considered. An approximation to the system that makes use of a mixed finite element method
for the electrostatic potential equation combined with a finite element method for the densities
equations and the temperature equation is proposed. Existence and uniqueness of the approximate
solution are proved. A convergence analysis is also given.
Jiansong Zhang, Jiang Zhu, Danping Yang and Xijun . (2010). Finite Element Analysis of Semiconductor Device Equations with Heat Effect.
International Journal of Numerical Analysis Modeling Series B. 1 (2).
197-216.
doi:
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