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Volume 9, Issue 1
The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device

Y. Yuan

Int. J. Numer. Anal. Mod., 9 (2012), pp. 86-104.

Published online: 2012-09

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  • Abstract

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized $L^2$ projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in $L^2$ norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

  • Keywords

Semiconductor device, alternating-direction, moving meshes, characteristic finite element, $L^2$ error estimate.

  • AMS Subject Headings

65M06, 65N30, 76M10, 76S05

  • Copyright

COPYRIGHT: © Global Science Press

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@Article{IJNAM-9-86, author = {Y. Yuan}, title = {The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device}, journal = {International Journal of Numerical Analysis and Modeling}, year = {2012}, volume = {9}, number = {1}, pages = {86--104}, abstract = {

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized $L^2$ projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in $L^2$ norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

}, issn = {2617-8710}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/ijnam/613.html} }
TY - JOUR T1 - The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device AU - Y. Yuan JO - International Journal of Numerical Analysis and Modeling VL - 1 SP - 86 EP - 104 PY - 2012 DA - 2012/09 SN - 9 DO - http://doi.org/ UR - https://global-sci.org/intro/article_detail/ijnam/613.html KW - Semiconductor device, alternating-direction, moving meshes, characteristic finite element, $L^2$ error estimate. AB -

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized $L^2$ projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in $L^2$ norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

Y. Yuan. (2012). The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device. International Journal of Numerical Analysis and Modeling. 9 (1). 86-104. doi:
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