Volume 9, Issue 1
The Characteristic Finite Element Alternating-direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device

Y. Yuan

DOI:

Int. J. Numer. Anal. Mod., 9 (2012), pp. 86-104

Published online: 2012-09

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  • Abstract

For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L^2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.

  • Keywords

Semiconductor device alternating-direction moving meshes characteristic finite element L^2 error estimate

  • AMS Subject Headings

65M06 65N30 76M10 76S05

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COPYRIGHT: © Global Science Press

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@Article{IJNAM-9-86, author = {Y. Yuan}, title = {The Characteristic Finite Element Alternating-direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device}, journal = {International Journal of Numerical Analysis and Modeling}, year = {2012}, volume = {9}, number = {1}, pages = {86--104}, abstract = {For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L^2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.}, issn = {2617-8710}, doi = {https://doi.org/}, url = {http://global-sci.org/intro/article_detail/ijnam/613.html} }
TY - JOUR T1 - The Characteristic Finite Element Alternating-direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device AU - Y. Yuan JO - International Journal of Numerical Analysis and Modeling VL - 1 SP - 86 EP - 104 PY - 2012 DA - 2012/09 SN - 9 DO - http://dor.org/ UR - https://global-sci.org/intro/article_detail/ijnam/613.html KW - Semiconductor device KW - alternating-direction KW - moving meshes KW - characteristic finite element KW - L^2 error estimate AB - For the transient behavior of a semiconductor device, the modified method of characteristics finite element alternating-direction procedures with moving meshes are put forward. Some techniques, such as calculus of variations, operator-splitting, characteristic method, generalized L^2 projection, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L^2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.
Y. Yuan. (1970). The Characteristic Finite Element Alternating-direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device. International Journal of Numerical Analysis and Modeling. 9 (1). 86-104. doi:
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