TY - JOUR
T1 - The Characteristic Finite Element Alternating-Direction Method with Moving Meshes for the Transient Behavior of a Semiconductor Device
JO - International Journal of Numerical Analysis and Modeling
VL - 1
SP - 86
EP - 104
PY - 2012
DA - 2012/09
SN - 9
DO - http://doi.org/
UR - https://global-sci.org/intro/article_detail/ijnam/613.html
KW - Semiconductor device, alternating-direction, moving meshes, characteristic finite element, $L^2$ error estimate.
AB - <p style="text-align: justify;">For the transient behavior of a semiconductor device, the modified
method of characteristics finite element alternating-direction procedures with
moving meshes are put forward. Some techniques, such as calculus of variations,
operator-splitting, characteristic method, generalized $L^2$ projection, energy
method, negative norm estimate and prior estimates and techniques are
employed. Optimal order estimates in $L^2$ norm are derived for the error in the
approximation solution. Thus the well-known theoretical problem has been
thoroughly and completely solved.</p>