@Article{CiCP-10-305,
author = {Tiao Lu, Gang Du, Xiaoyan Liu and Pingwen Zhang},
title = {A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs},
journal = {Communications in Computational Physics},
year = {2011},
volume = {10},
number = {2},
pages = {305--338},
abstract = {<p style="text-align: justify;">We propose a deterministic solver for the time-dependent multi-subband
Boltzmann transport equation (MSBTE) for the two dimensional (2D) electron gas in
double gate metal oxide semiconductor field effect transistors (MOSFETs) with flared
out source/drain contacts. A realistic model with six-valleys of the conduction band
of silicon and both intra-valley and inter-valley phonon-electron scattering is solved.
We propose a second order finite volume method based on the positive and flux conservative
(PFC) method to discretize the Boltzmann transport equations (BTEs). The
transport part of the BTEs is split into two problems. One is a 1D transport problem in
the position space, and the other is a 2D transport problem in the wavevector space. In
order to reduce the splitting error, the 2D transport problem in the wavevector space
is solved directly by using the PFC method instead of splitting into two 1D problems.
The solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic
is investigated. Comparison of the numerical results with ballistic solutions
show that the scattering influence is not ignorable even when the size of a nanoscale
semiconductor device goes to the scale of the electron mean free path.</p>},
issn = {1991-7120},
doi = {https://doi.org/10.4208/cicp.071109.261110a},
url = {http://global-sci.org/intro/article_detail/cicp/7444.html}
}