@Article{CiCP-23-1512,
author = {Vyacheslav A. Trofimov, Maria M. Loginova and Vladimir A. Egorenkov},
title = {Conservative Finite-Difference Scheme and Two-Stage Iteration Process of Its Realization for the 2D Problem of Semiconductor Plasma Generation by Femtosecond Pulse},
journal = {Communications in Computational Physics},
year = {2018},
volume = {23},
number = {5},
pages = {1512--1533},
abstract = {<p style="text-align: justify;">In this paper we develop conservative finite-difference schemes (FDS) for
the process of femtosecond pulse interaction with semiconductor. This process is described
by the set of 2D dimensionless differential equations concerning concentrations
of both free electrons and ionized donors, and potential of electric field, induced
by laser pulse and laser beam intensity changing. The electron mobility, electron diffusion,
nonlinear dependence of absorption coefficient on semiconductor characteristics
are taken into account also.<br/>For the problem under consideration we have constructed and compared two conservative
FDS. One of them is based on the well known split-step method, the second
one is based on the original two-stage iteration process. We paid the special attention
to the 2D Poisson equation solution. This equation is solved by using an additional
iteration process. Thus, to solve the problem under consideration it is necessary to
achieve a convergence of two iteration processes.<br/>As follows from computer simulation provided by us, the criterion choice for the
iteration process convergence can significantly affect on the equations solution accuracy.
We used the criterion based on assessment of an absolute and relative error of the
solution obtained on iterations. This criterion is also used for Poisson equation solving.
However, the iteration convergence criterion, based on discrepancy estimating, is
more effective for using in this case.<br/>Computer simulation results showed that the developed conservative FDS on the
base of two-stage iteration process is an effective tool for investigation of complicated
modes of semiconductor characteristics changing.</p>},
issn = {1991-7120},
doi = {https://doi.org/10.4208/cicp.121015.080517a},
url = {http://global-sci.org/intro/article_detail/cicp/11224.html}
}